? 2003 ixys all rights reserved hiperfet tm power mosfets isoplus264 tm (electrically isolated backside) single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr ixfl 39n90 v dss = 900 v i d25 = 34 a r ds(on) = 220 m ? ? ? ? ? t < ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 900 v v gh(th) v ds = v gs , i d = 8 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = i t 220 m ? notes 2, 3 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 900 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c, chip capability 34 a i dm t c = 25 c, note 1 154 a i ar t c = 25 c39a e ar t c = 25 c64mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 580 w t j -40 ... +150 c t jm 150 c t stg -40 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ weight 8g ds99094(10/03) preliminary data sheet g d s (backside) isoplus-264 tm g = gate d = drain s = source features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<30pf) z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z fast intrinsic rectifier applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixfl 39n90 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = i t , note 2 30 45 s c iss 13400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1230 pf c rss 320 pf t d(on) 45 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 68 ns t d(off) r g = 1 ? (external), 125 n s t f 30 ns q g(on) 375 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 75 nc q gd 190 nc r thjc 0.22 k/w r thck 0.07 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 39 a i sm repetitive; 154 a note 1 v sd i f = i s , v gs = 0 v, 1.3 v note 2 t rr i f = 25a, -di/dt = 100 a/ s, v r = 100 v 250 n s q rm 2 c i rm 9a notes: 1. pulse width limited by t jm. 2. pulse test, t 300 ms, duty cycle d 2% . 3. i t test current: i t = 19.5 a isoplus 264 outline please see ixfn39n90 data sheet for characteristic curves.
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